Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine
نویسندگان
چکیده
Indium phosphide, gallium arsenide phosphide, and aluminum indium phosphide have been deposited by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and tertiarybutylarsine. The effects of growth temperature and V/III ratio on the amount of silicon, sulfur, carbon, and oxygen in InP have been determined. Minimum incorporation was observed at 565 1C and a V/III ratio of 32. In this case, the material contained a background carrier concentration of 2.7 10 cm , and the Hall mobilities were 4970 and 135,000 cm/V s at 300 and 77K. The oxygen contamination in AlInP was found to be only 9.0 10 cm 3 for deposition at 650 1C and a V/III ratio of 35. The relative distribution of arsenic to phosphorus in GaAsyP1 y was determined at temperatures between 525 and 575 1C. The distribution coefficient [ðNAs=NPÞfilm=ðPTBAs=PTBPÞgas] ranged from 25.4 to 8.4, and exhibited an Arrhenius relationship with an apparent activation energy of 1.2 eV. r 2004 Elsevier B.V. All rights reserved. PACS: 81.15.Gh; 82.33.Ya; 73.61.Ey; 78.55.Cr
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